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AO4406AL N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.
Features
VDS (V) = 30V ID = 12A RDS(ON) < 11.5m RDS(ON) < 15.5m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
SOIC-8 D
S S S G D D D D G
D
G S
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
C C C
Maximum 30 20 12 10 100 22 24 3.1 2 -55 to 150
Units V V A A mJ W C
TC=25C TC=70C
ID IDM IAR EAR PD TJ, TSTG
Repetitive avalanche energy L=0.1mH Power Dissipation B TC=25C TC=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
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AO4406AL
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=12A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 610 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 40 0.8 11 VGS=10V, VDS=15V, ID=12A 5 1.9 1.8 VGS=10V, VDS=15V, RL=1.25, RGEN=3 IF=12A, dI/dt=500A/s
2
Min 30
Typ
Max
Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
1 5 100 1.5 100 9.5 TJ=125C 14 12.5 45 0.75 1 4 760 125 70 1.6 14 6.6 2.4 3 4.4 9 17 6 5.6 6.4 7 8 8 9.6 910 160 100 2.4 17 8 2.9 4.2 11.5 17 15.5 1.9 2.5
A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/s
A. The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 FR-4 board with F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. Rev 0 : Oct-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4406AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 80 60 ID (A) 40 20 0 0 1 2 3 10V 6V 7V 4.5V ID(A) 4V 5V 30 VDS=5V 25 20 15 10 3.5V 5 VGS=3V 4 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 0 25 50 75 100 125 150 175 VGS=10V ID=12A 125C 25C
VDS (Volts) Fig 1: On-Region Characteristics (Note E) 18 16 RDS(ON) (m) 14 12 10 8 6 VGS=10V VGS=4.5V
17
VGS=4.5V 5 ID=10A 2
10
0 Temperature (C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E)
1.0E+02
30 ID=12A 25 20 15 10 25C 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) IS (A) 125C
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 125C 25C
40
Alpha & Omega Semiconductor, Ltd.
RDS(ON) (m)
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AO4406AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=15V ID=12A Capacitance (pF) 1200 1000 Ciss 800 600 400 200 0 0 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 14 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss
8
VGS (Volts)
6
4
2
0
60 ID(A), Peak Avalanche Current 50 40 30 20 10 0 0.000001 TA=150C TA=125C TA=25C
1000.0 10s ID (Amps) 100.0 10.0 1.0 0.1 0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100
TA=100C
RDS(ON) limited
10s 100s 1ms 10ms 100ms DC 10s
TJ(Max)=150C TA=25C
0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability (Note C)
1000
TA=25C
100
Power (W)
10
1 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4406AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000
0.01
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4406AL
Gate Charge Test Circuit & W aveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg Vgs
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
E AR= 1/2 LIAR Vds
2
BVDSS
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt I RM Vdd
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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